TOSHIBA 2N3A8204-B
The Toshiba 2N3A8204-B is a PNP type silicon transistor for applications
such as amplifiers, switches and voltage regulator circuits. The transistor has the following characteristics:
High current magnification
Low leakage current
Low noise
High reliability
Product parameters:
Parameter value unit
Collector current (Ic) 2 A A
Collector-emitter voltage (Vce) 60 V V
Drain current (Icbo) 100 μA μA
Base-emitter voltage (Vbe(sat)) 0.7V V
Collector saturation current (Ic(sat)) 2 A A
Power dissipation (Pd) 30 W W