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FZ1200R12KF1 High power insulated gate bipolar transistor (IGBT) module - Changxin Automation

FZ1200R12KF1 High power insulated gate bipolar transistor (IGBT) module

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FZ1200R12KF1 High power insulated gate bipolar transistor (IGBT) module

FZ1200R12KF1

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Country of Origin: USA
Moq :1 piece
Packaging: new raw materials and individual packaging
Delivery time :2-3 working days
Payment method: Bank transfer, Western Union

FZ1200R12KF1

The FZ1200R12KF1 is a high power insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. IGBT is a kind of power semiconductor device which combines the advantages of bipolar transistor and field effect transistor. It is widely used in motor drive, power electronic inverter, industrial control and so on.

FZ1200R12KF1 High power insulated gate bipolar transistor (IGBT) module

Product characteristics

FZ1200R12KF1 High power insulated gate bipolar transistor (IGBT) module1
High voltage, high current: The FZ1200R12KF1 can withstand 1200V voltage and 1200A current, suitable for high power applications.
Fast switching: With a fast switching speed, you can achieve efficient power conversion.
Low on-voltage drop: Low on-voltage drop reduces power loss and improves system efficiency.
High temperature resistance: has good high temperature resistance, suitable for harsh working environment.
High reliability: After strict testing and screening, it has high reliability.

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