ABB 3BHB013085R0001 High power semiconductor devices

ABB 3BHB013085R0001

The ABB 3BHB013085R0001 module is a high power semiconductor device produced by ABB, which belongs to the IGCT (insulated gate bipolar transistor) module. IGCT is a kind of power device which combines the advantages of IGBT and GTO. It has the characteristics of fast switching, high voltage and high current, and is widely used in the field of power electronics.

Product name
Chinese name: ABB 3BHB013085R0001 IGCT module
Name: ABB 3BHB013085R0001 IGCT Module

ABB	3BHB013085R0001 High power semiconductor devices
Product description
Features:
Power conversion: Used for switching and control of high-power power electronic systems.
Frequency converter: Used in frequency converter to achieve accurate control of motor speed.
Static reactive power compensation device (SVC) : used to improve the power factor of the grid.
Features:
High power density: High power output in a small volume.、

ABB	3BHB013085R0001 High power semiconductor devices1
Fast switching: with a high switching frequency, improve the dynamic response of the system.
High reliability: suitable for harsh industrial environments.

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