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A-B 81001-450-53-R High power semiconductor devices - Changxin Automation

A-B 81001-450-53-R High power semiconductor devices

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A-B 81001-450-53-R High power semiconductor devices

A-B 81001-450-53-R

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Country of Origin: USA
Moq :1 piece
Packaging: new raw materials and individual packaging
Delivery time :2-3 working days
Payment method: Bank transfer, Western Union

A-B 81001-450-53-R

The A-B 81001-450-53-R module is A high-power semiconductor device commonly used for power conversion in industrial control systems. It belongs to the integrated gate commutated thyristor (IGCT) module, which has the characteristics of fast switching, high voltage resistance, etc., and is suitable for high current and high frequency application scenarios.

A-B 81001-450-53-R High power semiconductor devices

Product name and description
Product name: Allen-Bradley 81001-450-53-R IGCT module
Description: The module is an IGCT module produced by Rockwell Automation, which is mainly used in power electronic equipment such as high-power inverters and inverters.

A-B 81001-450-53-R High power semiconductor devices1
Main function
Power conversion: Convert alternating current to direct current or alternating current of different voltage levels.
Motor control: used to control motor speed, torque, etc.
Power electronic system: As the core device of power electronic system, it realizes various power conversion functions.

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