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FZ1200R12KF1 Power semiconductor device - Changxin Automation

FZ1200R12KF1 Power semiconductor device

FZ1200R12KF1 Power semiconductor device

FZ1200R12KF1

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Many in stock, first come first served, first-hand source, channel
Contact: Han Fangting Sales Manager
Mobile :18030042035
QQ: 748141623
Email: 748141623@qq.com
Web site :www.changxindcs.com
www.changxinsz.com

We operate ABB, GE aereration, A-B, Honeywell, KUKA, SCHNEIDER, Bentley, TRICONEX Invensys, WOODWARD, FOXBORO, WESTINGHOUSE, and MOTOROLA MOTOROLA, KEBA, KOLLMORGEN, EMERSON, HIMA dark horse, industrial and commercial energy storage, container energy storage, household light energy storage, (peak cutting, valley filling, backup power supply) can be contacted if necessary.

Country of Origin: USA
Moq :1 piece
Packaging: new raw materials and individual packaging
Delivery time :2-3 working days
Payment method: Bank transfer, Western Union

The FZ1200R12KF1 module is an IGBT power module, which belongs to the power semiconductor device. The IGBT (insulated gate bipolar transistor) is a power semiconductor device that combines the advantages of the high current drive capability of a bipolar transistor and the high input impedance of a MOSFET. The FZ1200R12KF1 module is usually used in various occasions requiring high-power switches, such as frequency converters, inverters, motor drives, etc.

Product name and meaning

FZ1200R12KF1  Power semiconductor device
FZ: Generally, it is the identification of the manufacturer or series, and the specific meaning needs to be determined according to the manufacturer.
1200R12KF1: This number and letter combination usually represents the electrical parameters of the module:
1200: May indicate that the rated voltage of the module is 1200V.
R12: indicates that the on-resistance of the module is 12 Mω.

FZ1200R12KF1  Power semiconductor device1
KF1: May indicate the type of package or other special characteristics of the module.
Product functions and features
High voltage and high current: can withstand high voltage and high current, suitable for high-power applications.
Fast switching: The switching speed is fast, and high frequency switching can be achieved.
Low on-voltage drop: The on-voltage is reduced, which can reduce power loss.
High temperature resistance: can work in high temperature environment.
Modular design: easy installation and maintenance.

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