TOSHIBA 2N3A3120 IGBT (insulated gate bipolar transistor) module

TOSHIBA 2N3A3120

The TOSHIBA 2N3A3120 module is a high-performance IGBT (insulated gate bipolar transistor) module that is widely used in industrial control fields. It can be used in various industrial equipment such as motor drive, UPS power supply, inverter and so on. The module adopts advanced IGBT technology and has the characteristics of high efficiency, low noise and high reliability. In addition, it is usually used in conjunction with the BASLER ELECTRIC DECS-200

TOSHIBA 2N3A3120 IGBT (insulated gate bipolar transistor) module-2L controller to achieve precise control of the IGBT module and ensure the stable operation of the equipment. The controller has a variety of protection functions, such as overcurrent protection, overheat protection, overvoltage protection, etc., to effectively protect the safe operation of the equipment 3.

Product parameters:

Rated voltage: 1200V3.

TOSHIBA 2N3A3120 IGBT (insulated gate bipolar transistor) module1
Rated current: 320A3.
Maximum dissipation power: 1900W3.
Package type: Module package 3.

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